On October 31, 2017, the "Sino-European Third-Generation Semiconductor Summit Forum" was successfully held at the Shenzhen Wuzhou Hotel, under the guidance of the Shenzhen Science and Technology Association. Organized by Southern University of Science and Technology, Pingshan District People's Government of Shenzhen, and Shenzhen Bronze Sword Technology Co., Ltd., the event brought together over 200 experts, scholars, and industry professionals from China and Europe to discuss cutting-edge technologies in third-generation semiconductors, such as silicon carbide and gallium nitride. This high-level gathering marked a significant milestone in the global semiconductor industry.
The forum featured a series of insightful speeches and presentations. Jiang Yuyang, Deputy Director of the Standing Committee of the Shenzhen Municipal People’s Congress and Chairman of the Shenzhen Science and Technology Association, delivered a welcoming address, highlighting Shenzhen’s technological achievements and its growing support for the third-generation semiconductor sector. He encouraged companies and researchers to seize new opportunities, invest more in R&D, and strengthen international collaboration to drive industry growth. Other notable speakers included Tang Tao from Southern University of Science and Technology and Magnus Breidne from the Royal Swedish Academy of Engineering.
Experts such as Mikael Östling from the Royal Institute of Technology, Peter Björkholm from the Swedish National Research Institute, Patrick Palmer from the University of Cambridge, and Yu Hongyu from Southern University of Science and Technology shared their insights on the design, manufacturing, and application of silicon and GaN-based devices. They also explored market opportunities and future trends in the third-generation semiconductor industry. Dr. Zhang Zhenzhong from Shenzhen Basic Semiconductor Co., Ltd. presented the company’s advancements in silicon carbide power devices, including the development of fully epitaxial trench JBS diodes using independently developed technology, which has achieved international standards.
Third-generation semiconductors, including silicon carbide and gallium nitride, are gaining global attention due to their superior properties, such as wide bandgap, high breakdown electric field, high thermal conductivity, and strong radiation resistance. These materials have broad applications in new energy vehicles, rail transit, smart grids, lighting, next-generation communications, and consumer electronics. The global market is expected to reach $10 billion, making it a key focus area for leading countries like the U.S., Europe, and Japan.
In China, the government has recognized the importance of third-generation semiconductors, as highlighted in the “Made in China 2025†initiative. The country has made remarkable progress in research and industrialization of silicon carbide substrates and materials. In device design and manufacturing, China is rapidly moving toward world-class standards.
The summit concluded with a positive outlook for the future of China’s third-generation semiconductor industry. Representatives from Shenzhen Bronze Sword Technology and Basic Semiconductor expressed confidence in the sector’s potential. With strong policy support and continuous innovation, the industry is entering a period of rapid growth. By leveraging domestic and international resources, companies like Basic Semiconductor are now mastering critical technologies across the entire supply chain, from material preparation to chip design, manufacturing, packaging, testing, and application.
The Sino-European Third-Generation Semiconductor Summit Forum not only facilitated meaningful exchanges between Chinese and European institutions but also laid the foundation for long-term cooperation and joint research. It is expected to significantly accelerate the development of China’s third-generation semiconductor industry in the years to come.
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