On October 31, 2017, the “Sino-European Third-Generation Semiconductor Summit Forum†was successfully held at the Shenzhen Wuzhou Hotel, under the guidance of the Shenzhen Science and Technology Association. The event was co-organized by Southern University of Science and Technology, the Pingshan District People’s Government of Shenzhen, and Shenzhen Bronze Sword Technology Co., Ltd. Over 200 industry leaders, experts, and scholars from China and Europe gathered to discuss cutting-edge technologies in third-generation semiconductors such as silicon carbide and gallium nitride. This high-profile gathering marked a significant milestone in the global semiconductor industry.
The forum brought together key players in the field, including representatives from Shenzhen Basic Semiconductor Co., Ltd., the Shenzhen Third Generation Semiconductor Device Key Laboratory, and the Shenzhen China-Europe Innovation Center. It was also supported by institutions like the Shenzhen Tsinghua University Research Institute, Lihe Science & Technology Group, and the Shenzhen 1000 People Experts Association. The event featured insightful speeches and presentations that highlighted the latest advancements and future directions of third-generation semiconductor technology.
Jiang Yuyang, Deputy Director of the Standing Committee of the Shenzhen Municipal People's Congress and Chairman of the Shenzhen Science and Technology Association, delivered a welcoming speech. He emphasized Shenzhen's achievements in science and technology, as well as its strong support for the development of third-generation semiconductors. He encouraged companies and researchers to invest more in R&D and strengthen international collaboration to drive the industry forward. Other notable speakers included Tang Tao from Southern University of Science and Technology and Magnus Breidne from the Royal Swedish Academy of Engineering, who shared their perspectives on the future of semiconductor innovation.
Experts such as Mikael Östling from the Royal Institute of Technology, Peter Björkholm from the Swedish National Research Institute, Patrick Palmer from the University of Cambridge, and Yu Hongyu from Southern University of Science and Technology provided in-depth insights into the design, manufacturing, and applications of silicon and GaN-based devices. They also discussed market opportunities and emerging trends in the third-generation semiconductor sector. Dr. Zhang Zhenzhong from Shenzhen Basic Semiconductor Co., Ltd. presented the company's breakthroughs in silicon carbide power devices, including the development of fully epitaxial trench JBS diodes, which have achieved international standards.
Third-generation semiconductors, such as silicon carbide and gallium nitride, are gaining global attention due to their superior properties, including wide bandgap, high breakdown voltage, high electron mobility, and excellent thermal conductivity. These materials are essential for next-generation technologies like electric vehicles, smart grids, 5G communications, and energy-efficient lighting. The global market for these semiconductors is expected to reach $10 billion in the coming years, making it a key focus area for the U.S., Europe, and Japan.
China has been actively advancing its third-generation semiconductor industry, with policies such as "Made in China 2025" emphasizing the importance of this sector. The country has made significant progress in material research, production, and device manufacturing, positioning itself among the world's leading nations in this field. Shenzhen, in particular, has become a hub for innovation and industrial development in this area.
The summit concluded with a positive outlook on the future of China's third-generation semiconductor industry. Participants expressed confidence in the growing potential of the sector. According to the Vice President of Bronze Sword Technology and General Manager of Basic Semiconductor, Dr. Yan, the industry is entering a period of rapid growth. With strong policy support and continuous technological innovation, Basic Semiconductor has established itself as one of the fastest-growing companies in the silicon carbide power device market in China.
The Sino-European Third-Generation Semiconductor Summit Forum not only facilitated meaningful dialogue between Chinese and European stakeholders but also laid the foundation for long-term collaborations. By promoting academic exchanges and joint research initiatives, the event contributed significantly to the advancement of the global third-generation semiconductor industry.
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