Cypress Semiconductor, a leading provider of static random access memory (SRAM), has recently launched its 16Mb fast asynchronous SRAM with built-in error correction code (ECC). This innovative memory solution enhances data reliability by integrating ECC directly on the chip, eliminating the need for external error correction components and reducing board space requirements. The device is ideal for critical applications such as industrial, military, telecommunications, medical, automotive, and consumer electronics, where data integrity is crucial.
Soft errors caused by background radiation can corrupt stored data, potentially leading to significant losses. Cypress's new asynchronous SRAM features an embedded ECC module that automatically corrects these errors in real time without user intervention, delivering industry-leading soft error rate (SER) performance. With a 10-ns access time and compatibility with existing asynchronous SRAM pinouts, this device allows customers to enhance system reliability without redesigning their boards.
Cypress also introduced a new version of the fast asynchronous SRAM equipped with PowerSnooze™ technology. This feature combines the 10-ns access speed of asynchronous SRAM with ultra-low standby power, similar to the MoBL family. The PowerSnooze mode offers deep sleep currents as low as 12 µA for the 16Mb SRAM, making it ideal for battery-powered or energy-sensitive applications. Additionally, this variant includes on-chip ECC functionality for enhanced reliability.
"Cypress has been the undisputed leader in asynchronous SRAM for over three decades, offering one of the most comprehensive product lines in the industry," said Sunil Thamaran, Senior Director of Cypress’s Asynchronous SRAM Business Unit. "Our latest 16Mb asynchronous SRAM provides a reliable single-chip solution for high-speed and low-power applications. We will also introduce SCC variants with ECC capabilities in the near future."
The 16Mb asynchronous SRAM supports industry-standard x8, x16, and x32 configurations. It operates across a wide range of voltages—1.8V, 3V, and 5V—and is available in both industrial (-40°C to +85°C) and automotive grades (-40°C to +125°C), ensuring versatility for various environments.
Availability
Volume samples of the 16Mb Fast SRAM and the PowerSnooze-enabled version are currently available, with full production expected to begin in July 2014. These devices are offered in multiple RoHS-compliant packages, including 48-pin TSOP I, 48-ball VFBGA, 119-ball BGA, and 54-pin TSOP II, providing flexibility for different design needs.
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