Internet of Things (IoT) applications will drive the growth of Fully Detleted process technology. In order to meet the design requirements of low power consumption, low cost and high efficiency, GlobalFoundries has also invested in fully depleted insulation layers in addition to the continuous development of 14nm and 7nm fin transistor (FinFET) process technologies. Silicon (FD-SOI) market, and launched 22nm and 12nm FDX process platforms to attack the Internet of Things business opportunities.
Gary Patton, Gerafonte's chief technology officer and senior vice president of global R&D, said that although FinFET is the current mainstream process technology, it is relatively complicated and costly. Some small and medium-sized IC design companies cannot afford the cost of FinFET's expensive mask. In order to meet the small and diverse needs of IoT products, and to reduce costs, and to have certain performance, FD-SOI technology is gradually emerging. 5G will be an important growth driver in the FD-SOI market in the next decade; in addition, mobile computing, artificial intelligence, virtual reality (VR) / augmented reality (AR), and automotive electronics applications are also the first one. Technical application focus.
Patton further pointed out that the Internet of Things, mobile computing and 5G huge business opportunities are expected to accelerate the growth of FDX, while FDX and FinFET technologies are in fact complementary, not competing, and each has a different market position. In general, FinFET is suitable for larger die (Die), FDX is suitable for smaller die; for customers with no cost considerations, FinFET can be used to achieve high performance and high density products, if there is cost Customers considering it can adopt FDX to meet the requirements of low power consumption, low cost and small size.
It is reported that GlobalFoundries currently has two product plans for FD-SOI technology. The first is 22FDX, which was released in 2015 and operates at 0.4 volts for ultra-low dynamic power, lower thermal effects, and more compact product sizes. Compared to 28nm, the 22FDX size is reduced by 20%, the number of masks is reduced by 10%, the power consumption is reduced by 70% compared to the 28nm HKMG process, and the single chip can integrate RF functions. The 22FDX process design kit has been completed in the second quarter of 2016 and is expected to enter mass production in the first quarter of 2017.
As for the 12FDX, it claims to provide performance comparable to the 10nm FinFET process, but with better power consumption and lower cost than the 16nm FinFET, it will be suitable for mobile computing, 5G communication, artificial intelligence, AR/VR, drones, And applications such as autonomous vehicles. The customer investment schedule for the 12FDX process is expected to be in the first half of 2019.
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