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International Rectifier (IR) has introduced a chipset that uses the IRS2092 integrated audio driver IC with features such as a protected pulse width modulation (PWM) switch and an IR complete digital audio MOSFET. The chipset is targeted at medium-power, high-performance Class-D audio amplifier applications ranging from 50W to 500W, such as home theater, home stereos, powered speakers, musical instruments, and professional audio applications.The Class D audio solution formed by the new chip is smaller than the Class AB design. For example, in a 100W application, the IRS2092 IC and the IRF6645 DirectFET MOSFET can reduce board area by 60% and also reduce the number of devices by 20% compared to typical material tables.
Based on a half-bridge topology, the new audio driver IC integrates four basic functions required for a Class D design implementation, including error amplifiers, PWM comparators, gate drivers, and powerful protection circuitry. As a result, this compact 16-pin IC provides exceptional noise immunity, reducing breaks at the beginning and end, while greatly reducing some of the most complex and expensive design tasks such as overload protection.
Key features of the IRS2092 include: analog PWM regulators up to 800kHz, programmable bidirectional overcurrent protection (OCP) with self-reset control, undervoltage lockout protection (UVLO), and programmable presets for scalable power design Dead time, etc.
The IC is also equipped with a wide range of digital audio MOSFETs to handle output power from 50W to 500W. As part of IR's IRFI4x, IRFB422x and DirectFET families, these MOSFETs are optimized for key parameters of audio performance such as efficiency, total harmonic distortion (THD) and electromagnetic interference (EMI).
The IRAUDAMP5 reference design accelerates development and evaluation. Based on the IRS2092 IC and IRF6645 DirectFET power MOSFETs, the dual-channel design uses a 120W half-bridge power amplifier that can be used for different power and channel counts, eliminating the need for a heat sink in normal operating conditions. The design achieves 96% efficiency at 120W MOSFET stage and 0.005% THD+N at 1kHz, 60W, 4Ω (both typical).
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